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Flexible inkjet-printed dual-gate organic thin film transistors and PMOS inverters: Noise margin control by top gate
Organic Electronics ( IF 3.2 ) Pub Date : 2020-06-18 , DOI: 10.1016/j.orgel.2020.105847
Subhash Singh , Yasunori Takeda , Hiroyuki Matsui , Shizuo Tokito

Low operating voltage dual-gate p-type organic thin film transistors (OTFTs) and PMOS inverters have been fabricated on 125 μm-thick flexible polyethylene naphthalate (PEN) substrates by solution-processed techniques. Inkjet-printed silver electrodes are used for gate, source, and drain contacts while the active organic semiconducting material is printed by a dispenser system over parylene dielectric. Bottom channel, top channel, and dual-gate OTFTs separately display average charge carrier mobilities of 0.03, 0.11, and 0.37 cm2 V−1 s−1, respectively. Top-gate is used to independently tune the threshold voltage for bottom-gate OTFT and vice versa. Two PMOS inverters are fabricated with high gain and low supply voltage operation. Ideal symmetric voltage transfer characteristics with high noise margin are achieved by controlling the threshold voltage of the driver OTFT by top-gate bias for low supply voltage, VDD = −2.5 V.



中文翻译:

柔性喷墨印刷双栅极有机薄膜晶体管和PMOS反相器:通过顶栅控制噪声容限

通过溶液处理技术,已在125μm厚的柔性聚萘二甲酸乙二醇酯(PEN)基板上制造了低工作电压双栅p型有机薄膜晶体管(OTFT)和PMOS反相器。喷墨印刷的银电极用于栅极,源极和漏极触点,而活性有机半导体材料则通过分配器系统在聚对二甲苯电介质上印刷。底部通道,顶部通道和双栅极OTFT分别显示出0.03、0.11和0.37 cm 2  V -1  s -1的平均载流子迁移率, 分别。顶栅用于独立调节底栅OTFT的阈值电压,反之亦然。制造了两个具有高增益和低电源电压工作的PMOS反相器。通过针对低电源电压V DD  = -2.5 V的顶栅偏置控制驱动器OTFT的阈值电压,可以实现具有高噪声裕度的理想对称电压传输特性。

更新日期:2020-06-23
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