In this work, low-energy fragment-ion beams were produced from hexamethyldisiloxane (HMDSO) used as a source material and substrates were irradiated by these beams with supplemental oxygen gas for the formation of silicon dioxide (SiO₂) film. During this process, SiO⁺ ions having an energy of 50 eV were mass-selected from various fragments derived from the decomposition of HMDSO. These ions were subsequently transferred to a Si substrate at room temperature in conjunction with a supplemental oxygen flow. The resulting film was assessed by Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy to confirm SiO₂ deposition. The bonding of incident SiO⁺ ions with a quartz crystal microbalance (QCM) was assessed at ion energies of 50, 100 and 200 eV, and the sticking probability of incident SiO⁺ ions to the QCM crystal substrate was found to decrease monotonically with increasing energy.

在这项工作中，由用作原料的六甲基二硅氧烷（HMDSO）产生了低能量的碎片离子束，并用补充的氧气辐照基板以形成二氧化硅（SiO ₂）膜。在此过程中，从HMDSO分解产生的各种碎片中质量选择了能量为50 eV的SiO ⁺离子。随后将这些离子与补充氧气流一起转移到室温的Si衬底上。通过傅立叶变换红外光谱法和X射线光电子能谱法评估所得膜以确认SiO ₂沉积。入射SiO ⁺的键合在50、100和200 eV的离子能量下对具有石英晶体微天平（QCM）的离子进行了评估，发现随能量增加，入射SiO ⁺离子向QCM晶体基板的粘附概率降低。