Abstract The 200-nm-thick aluminum zinc oxide (AZO) seed sidewall and the 1-μm-wide strips sandwiched by 3-μm-wide SiO2 barriers were utilized to grow parallelly lateral ZnO nanorods using hydrothermal method. The resulting ZnO nanorods were used for fabricating thin-film transistors. To dodge the problem of oxygen vacancies and defects resided in the ZnO nanorods, the annealing process at various temperatures was carried out. Using the measurement of photoluminescence spectra, it was estimated that the ZnO nanorods annealed in an oxygen ambience at 300 °C for 10 min had the lowest density of oxygen vacancies and defects. Consequently, its resulting thin-film transistors revealed the best performances of threshold voltage of 0.07 V, effective field-effect mobility of 63.26 cm2/V-s, transconductance of 20.1 μS and subthreshold swing of 0.44 V/dec.

中文翻译：

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使用水热法生长的平行横向 ZnO 纳米棒的底栅薄膜晶体管

摘要 利用 200 nm 厚的氧化锌 (AZO) 种子侧壁和 1 μm 宽的条带夹在 3 μm 宽的 SiO2 势垒中，使用水热法平行横向生长 ZnO 纳米棒。所得的 ZnO 纳米棒用于制造薄膜晶体管。为了避免氧化锌纳米棒中存在氧空位和缺陷的问题，进行了不同温度下的退火过程。使用光致发光光谱的测量，估计在氧气环境中在 300°C 下退火 10 分钟的 ZnO 纳米棒具有最低的氧空位和缺陷密度。因此，其得到的薄膜晶体管显示出最佳性能：阈值电压为 0.07 V，有效场效应迁移率为 63.26 cm2/Vs，跨导为 20.1 μS，亚阈值摆幅为 0.44 V/dec。