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Sub-Nanosecond Pulse Generation in a Microchip Nd:La0.15Gd0.85VO4 Laser
Infrared Physics & Technology ( IF 3.3 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.infrared.2020.103408
Shuo Han

Abstract A sub-nanosecond microchip laser was constructed using a Nd:La0.15Gd0.85VO4 with Cr4+:YAG saturable absorber. A single 880 ps pulse was recorded under an incident pump power of 4.91 W, corresponding to a repetition rate of 35 kHz. When the incident pump power exceeded 5 W, the system transferred a single picosecond pulse train into 0.9/1.1 ns two pulse train forms. The average output power increased from 108 mW to 130 mW, corresponding to a peak power decrease from 3.5 kW to ∼1.8 kW, which might be utilized for laser pulse self-calibrations in time-of-flight distance measurements.

中文翻译:

在微芯片 Nd:La0.15Gd0.85VO4 激光器中产生亚纳秒脉冲

摘要 用Nd:La0.15Gd0.85VO4 和Cr4+:YAG 可饱和吸收体构建了亚纳秒微芯片激光器。在 4.91 W 的入射泵浦功率下记录了单个 880 ps 脉冲,对应于 35 kHz 的重复率。当入射泵浦功率超过 5 W 时,系统将单个皮秒脉冲串转换为 0.9/1.1 ns 的两个脉冲串形式。平均输出功率从 108 mW 增加到 130 mW,对应于峰值功率从 3.5 kW 减少到~1.8 kW,这可用于飞行时间距离测量中的激光脉冲自校准。
更新日期:2020-09-01
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