We report a broad-band low-intensity photodetection enriched with a good reproducibility by SnO₂ thin film grown by a facile vapour-liquid-solid technique. Unprecedentedly, simple Al/SnO₂/Al photoconductive device, operated at room temperature in the wavelength range from ultraviolet (300 nm) to near infra-red (800 nm) show responsivities 2.04, 0.19, 0.25 and 0.19 mA/W respectively for 300 nm, 450 nm, 550 nm & 800 nm lights indicating broad-band photodetectivity due to its sub-band gap defects. It can also detect lights with very low-intensity of 14 μW/cm² (300 nm), 54 μW/cm² (450 nm), 42 μW/cm² (550 nm) & 12 μW/cm² (800 nm) having responsivity values of 8.00, 1.02, 1.42 and 0.70 mA/W respectively. Interestingly, the defect states within the band gap causing the photosensitivity over a wide wavelength range have been proposed uniquely by a systematic successive photocurrent transient experiment using illuminations from NIR to UV region supported by the photoluminescence results. These excellent performances unambiguously demonstrate that the simple SnO₂ film is promising for utilization as efficient broad-band photodetector.

我们报告了宽带低强度光电检测，通过利用便捷的液-液-固技术生长的SnO ₂薄膜丰富了良好的再现性。前所未有地，简单的Al / SnO ₂ / Al光电导器件在室温下从紫外（300 nm）到近红外（800 nm）的波长范围内运行，其300的响应度分别为2.04、0.19、0.25和0.19 mA / W nm，450 nm，550 nm和800 nm的光表示其子带隙缺陷，因此具有宽带光电探测性。它还可以检测强度非常低的光，分别为14μW/ cm ²（300 nm），54μW/ cm ²（450 nm），42μW/ cm ²（550 nm）和12μW/ cm ²（800 nm）的响应度分别为8.00、1.02、1.42和0.70 mA / W。有趣的是，通过系统的连续光电流瞬态实验，使用从NIR到UV区域的照明（由光致发光结果支持），独特地提出了在宽波长范围内引起光敏性的带隙内缺陷状态。这些优异的性能清楚地表明，简单的SnO ₂膜有望用作有效的宽带光电探测器。