Abstract Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and Jsc as high as 33.0 mA/cm2 has been obtained.

中文翻译：

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适用于硅异质结太阳能电池的室温溅射ITO薄膜的微观结构演变

摘要 已经研究了厚度对厚度范围为 60 至 430 nm 的溅射氧化铟锡 (ITO) 的结构、光学和电学性能的影响。随着薄膜厚度的增加，结晶度和晶粒尺寸增加，而拉伸结构畸变和电阻率降低。观察到发生了微观结构演变：初始非晶层以多晶相演变，具有晶粒 - 亚晶粒表面形态。载流子浓度随着薄膜厚度的增加而增加，并且已经发现电特性和结构畸变之间的一般关系。在较薄的薄膜中，较大的拉伸变形允许在晶格中包含更多的间隙 O 和/或 Sn 原子。在能隙、电阻率和光吸收的变化方面，还观察到厚度对电光特性的显着影响。已生产出硅异质结太阳能电池，并获得高达 33.0 mA/cm2 的 Jsc。