当前位置: X-MOL 学术Semicond. Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Orientation dependence of electrical properties of polycrystalline Cu 2 O thin films
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-06-14 , DOI: 10.1088/1361-6641/ab883b
Miguel Tibério , Tomás Calmeiro , Suman Nandy , Daniela Nunes , Rodrigo Martins , Elvira Fortunato , Jonas Deuermeier

Cuprous oxide (Cu 2 O) is known to show significant variation in its electrical properties. This article presents a correlation between local conductivity and preferential orientation of grains in polycrystalline Cu 2 O thin films. Out-of-plane current in the grain region and in-plane macroscopic conductivity are analysed and both show the same orientation dependence: The {111}-oriented interfaces are more conductive than in the {100} orientation. In conjunction with the columnar growth of the films, this shows that electrical properties of polycrystalline Cu 2 O thin films are dependent on the grain facet orientation.

中文翻译:

多晶Cu 2 O薄膜的电性能的取向依赖性

众所周知,氧化亚铜(Cu 2 O)的电性能会发生显着变化。本文提出了多晶Cu 2 O薄膜的局部电导率与晶粒择优取向之间的相关性。分析了晶粒区域中的平面外电流和平面内的宏观电导率,并且两者都显示出相同的方向依赖性:{111}方向的界面比{100}方向的界面更具导电性。结合薄膜的柱状生长,这表明多晶Cu 2 O薄膜的电性能取决于晶粒的小面取向。
更新日期:2020-06-14
down
wechat
bug