当前位置:
X-MOL 学术
›
Int. J. Appl. Ceram. Technol.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effects of aggregate/matrix‐phase ratio on the in‐situ synthesis of SiC whiskers and properties of reaction‐bonded SiC
International Journal of Applied Ceramic Technology ( IF 2.1 ) Pub Date : 2020-06-28 , DOI: 10.1111/ijac.13573 Yage Li 1 , Xinbin Lao 2 , Tao Wang 1 , Jianmin Liu 2 , Feng Jiang 1 , Guo Feng 2 , Weihui Jiang 1, 2 , Huidong Tang 1
International Journal of Applied Ceramic Technology ( IF 2.1 ) Pub Date : 2020-06-28 , DOI: 10.1111/ijac.13573 Yage Li 1 , Xinbin Lao 2 , Tao Wang 1 , Jianmin Liu 2 , Feng Jiang 1 , Guo Feng 2 , Weihui Jiang 1, 2 , Huidong Tang 1
Affiliation
Reaction‐bonded silicon carbide (RBSC) materials were synthesized by a carbon‐buried firing method, using α‐SiC powders with different sizes as aggregates, while silicon and graphite powders as matrix‐phase materials for in‐situ synthesis of β‐SiC. The effect of the mass ratio of α‐SiC aggregate to β‐SiC matrix‐phase on the in‐situ synthesis of β‐SiC whiskers was investigated and the optimum mass ratio was determined according to the properties of RBSC materials. The phase compositions, microstructure, and properties of the RBSC materials were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscope (TEM), respectively. The results showed that the decreasing aggregate/matrix‐phase ratio could increase the yield and aspect ratio of β‐SiC whiskers by improving the amount of pores and SiO2 content. The β‐SiC whiskers with stacking faults grew along [111] direction. The in‐situ formed β‐SiC whiskers and SiO2 in the matrix‐phase enhanced the hot modulus of rupture (HMOR) of the RBSC materials, and the sample with the aggregate/matrix‐phase ratio of 70:30 showed the highest cold modulus of rupture (CMOR) of 53.3 MPa, high HMOR of 43.3 MPa, and medium water absorption of 13.8%.
中文翻译:
骨料/基体比对SiC晶须原位合成及反应结合SiC性能的影响
反应键合碳化硅(RBSC)材料是通过碳埋烧法合成的,其中使用不同尺寸的α-SiC粉末作为聚集体,而硅和石墨粉末作为原位合成β-SiC的基质相材料。研究了α-SiC聚集体与β-SiC基体相的质量比对β-SiC晶须原位合成的影响,并根据RBSC材料的性能确定了最佳质量比。分别通过X射线衍射(XRD),扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征了RBSC材料的相组成,微观结构和性能。结果表明,降低的骨料/基体比可以通过改善孔和SiO的含量来提高β-SiC晶须的产率和长宽比。2内容。具有堆积缺陷的β-SiC晶须沿[111]方向生长。在基体相中原位形成的β-SiC晶须和SiO 2增强了RBSC材料的热断裂模量(HMOR),并且骨料/基体比为70:30的样品显示出最高的冷度断裂模量(CMOR)为53.3 MPa,高HMOR为43.3 MPa,中等吸水率为13.8%。
更新日期:2020-06-28
中文翻译:
骨料/基体比对SiC晶须原位合成及反应结合SiC性能的影响
反应键合碳化硅(RBSC)材料是通过碳埋烧法合成的,其中使用不同尺寸的α-SiC粉末作为聚集体,而硅和石墨粉末作为原位合成β-SiC的基质相材料。研究了α-SiC聚集体与β-SiC基体相的质量比对β-SiC晶须原位合成的影响,并根据RBSC材料的性能确定了最佳质量比。分别通过X射线衍射(XRD),扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征了RBSC材料的相组成,微观结构和性能。结果表明,降低的骨料/基体比可以通过改善孔和SiO的含量来提高β-SiC晶须的产率和长宽比。2内容。具有堆积缺陷的β-SiC晶须沿[111]方向生长。在基体相中原位形成的β-SiC晶须和SiO 2增强了RBSC材料的热断裂模量(HMOR),并且骨料/基体比为70:30的样品显示出最高的冷度断裂模量(CMOR)为53.3 MPa,高HMOR为43.3 MPa,中等吸水率为13.8%。