Present work has used Green’s function approach to derive a two-dimensional analytical model of the double gate (DG) MOSFET at the subthreshold regime of operation that considers the effect of inevitable source/drain (S/D) lateral Gaussian doping profile. The non-integrable Gaussian term has been converted into an integrable function for accurate Fourier coefficient calculation which is then used to determine the potential equations of all three regions. These equations are then utilized to formulate channel current (I_sub), the threshold voltage (V_t) roll off and subthreshold slope (SS) of the device. The effects of lateral Gaussian profile at different gate length (L), and for devices with different combinations of oxide thickness (t_ox) and channel thickness (t_si) have been investigated. The results show that the S/D Gaussian doping profile has severe effects at scaled gate lengths, where gate electrostatic control is of paramount importance.

目前的工作已经使用格林函数方法在亚阈值工作状态下得出了双栅极（DG）MOSFET的二维分析模型，该模型考虑了不可避免的源极/漏极（S / D）横向高斯掺杂分布的影响。非可积高斯项已转换为可积函数，以进行精确的傅立叶系数计算，然后将其用于确定所有三个区域的势方程。然后，利用这些方程式来制定通道电流（I _sub），阈值电压（V _t）滚降和器件的亚阈值斜率（SS）。高斯横向分布在不同浇口长度下的影响（L），并且针对具有不同氧化物厚度（t _ox）和沟道厚度（t _si）组合的器件进行了研究。结果表明，S / D高斯掺杂分布在按比例缩放的栅极长度上具有严重影响，其中栅极静电控制至关重要。