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Lowering oxygen vacancies of ZnO nanorods via Mg-doping and their effect on polymeric diode behavior
Sensors and Actuators A: Physical ( IF 4.6 ) Pub Date : 2020-06-15 , DOI: 10.1016/j.sna.2020.112163
Xuan Yu , Xiaoming Yu , Miao Yan , Tianfeng Weng , Liqiao Chen , Yingtang Zhou , Jun Wei

In this work, ZnO nanorods were prepared using an aqueous method at low temperature (95 °C). The nanorods were doped with different Mg content and then spin-coated on top with p-type conductive polymer poly (3-hexylthiophene) (P3HT) generating p–n junction. The I–V characteristics of the device showed that the amount of Mg-doping significantly affected the rectification ratio. Analysis by photoluminescence, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) indicated that oxygen vacancy concentration correlated well with Mg-doping content as well as rectification ratio of the p–n junction devices. Devices with 0.8 Mg-doping ZnO nanorods showed the best rectification ratio, demonstrating a facile method for improving p–n junction diode behavior through controlling the defect properties of ZnO nanorods via Mg doping. Moreover, ultraviolet and visible spectrophotometry results showed that Mg-doped ZnO nanorods could act as an “optical filter” allowing further optimization of high quality ZnMgO nanorods and UV/visible color selectively of ZnO/Organic diodes.



中文翻译:

通过掺Mg降低ZnO纳米棒的氧空位及其对聚合二极管行为的影响

在这项工作中,ZnO纳米棒是使用水性方法在低温(95°C)下制备的。将纳米棒掺杂不同的Mg含量,然后在其顶部旋涂p型导电聚合物聚(3-己基噻吩)(P3HT),生成p–n结。在我-V器件的特性表明,Mg的掺杂量显着影响整流比。通过光致发光,X射线光电子能谱(XPS)和紫外光电子能谱(UPS)进行的分析表明,氧空位浓度与Mg掺杂含量以及p–n结器件的整流比密切相关。掺杂0.8 Mg的ZnO纳米棒的器件显示出最佳的整流比,证明了一种通过Mg掺杂控制ZnO纳米棒的缺陷特性来改善p–n结二极管性能的简便方法。此外,紫外和可见光分光光度法的结果表明,掺Mg的ZnO纳米棒可以用作“滤光片”,从而可以进一步优化高质量ZnMgO纳米棒和ZnO /有机二极管的UV /可见色。

更新日期:2020-06-15
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