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Growth characteristics of Fe-doped GaN epilayers on SiC (001) substrates and their effects on high breakdown voltage devices
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.mssp.2020.105228
Kai-Ping Chang , Po-Jung Lin , Ray-Hua Horng , Dong-Sing Wuu

Abstract The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001) substrates were studied using metalorganic chemical vapor deposition for high breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be realized by changing the ferrocene flow, while higher Fe concentrations in the GaN epilayer affect the surface morphology. To reduce the Fe trapping carrier and the sheet resistances of the two-dimension electron gas generated from the interface of AlGaN and GaN, the thickness ratio of Fe-doped and undoped GaN bi-epilayers was also optimized. AlGaN/GaN high electron mobility transistors with the optimum doping concentration of Fe-doped GaN and suitable thickness of undoped GaN have been successfully developed. The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain the high breakdown voltage. The details of the correlation between the surface morphology, Fe concentration, and thickness of Fe-doped GaN epitaxial layers used for high breakdown voltage devices will be also discussed in this paper.

中文翻译:

Fe掺杂GaN外延层在SiC(001)衬底上的生长特性及其对高击穿电压器件的影响

摘要 使用金属有机化学气相沉积技术研究了半绝缘 SiC (001) 衬底上掺杂 Fe 的 GaN 外延层的生长特性,用于高击穿电压器件应用。通过改变二茂铁流量可以实现光滑的 Fe 掺杂 GaN 外延层表面,而 GaN 外延层中较高的 Fe 浓度会影响表面形态。为了降低AlGaN和GaN界面产生的Fe俘获载流子和二维电子气的薄层电阻,还优化了Fe掺杂和未掺杂GaN双外延层的厚度比。已成功研制出具有最佳Fe掺杂GaN掺杂浓度和适当厚度未掺杂GaN的AlGaN/GaN高电子迁移率晶体管。Fe掺杂GaN外延层实现的击穿电压可高达2457V,这归因于Fe掺杂GaN外延层具有更高的电阻,可以承受较高的击穿电压。本文还将详细讨论用于高击穿电压器件的 Fe 掺杂 GaN 外延层的表面形貌、Fe 浓度和厚度之间的相关性。
更新日期:2020-11-01
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