Abstract We developed BaSiO3:Ce crystals with different Ce concentration of 0.5, 1.0 and 2.0 % using the floating zone method, and evaluated the PL, scintillation and ionizing radiation induced storage luminescence properties. Under X-ray irradiation, a broad emission band appears at around 400 nm due to 5d–4f transitions of Ce3+. The decay time constants are in a range of 43-47 ns, which is a typical time constant of 5d-4f transitions of Ce3+. Under 137Cs γ-ray irradiation, only the 1.0 % Ce-doped sample shows a photoabsorption peak, and the scintillation light yield is ∼1,500 ph/MeV. The results of pulse height spectra and TSL glow curves demonstrates a complementary relationship between scintillation and ionizing radiation induced storage luminescence properties in this material.

中文翻译：

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BaSiO3:Ce晶体的浮区法闪烁特性

摘要 我们使用浮区法开发了不同Ce 浓度为0.5、1.0 和2.0% 的BaSiO3:Ce 晶体，并评估了PL、闪烁和电离辐射诱导的存储发光特性。在 X 射线照射下，由于 Ce3+ 的 5d-4f 跃迁，在 400 nm 附近出现了宽发射带。衰减时间常数在 43-47 ns 范围内，这是 Ce3+ 5d-4f 跃迁的典型时间常数。在 137Cs γ 射线照射下，只有 1.0% Ce 掺杂的样品显示出光吸收峰，闪烁光产额约为 1,500 ph/MeV。脉冲高度光谱和 TSL 辉光曲线的结果表明该材料中闪烁和电离辐射诱导的存储发光特性之间存在互补关系。