Abstract We report the influence of reactive oxygen (O2) and argon (Ar) plasma based ITO:Zr bi-layers for silicon heterojunction (SHJ) solar cells. The purpose of reactive O2 sputtered ITO:Zr was to improve the Hall mobility and work function while the Ar based ITO:Zr films play an important role to maintain good electrical characteristics. The thickness of reactive O2 based ITO:Zr films was fixed at 15 nm while Ar based films was varied from 65 to 125 nm, respectively. ITO:Zr bi-layers with the thickness of 15/105 nm deposited by O2 and Ar plasma, respectively, showed lowest resistivity of 2.358 × 10−4 Ω cm and high Hall mobility of 39.3 cm2/V · s. All ITO:Zr bi-layers showed an average transmittance of above 80% in the visible wavelength (380–800 nm) region. Work function of ITO:Zr bi-layers was calculated from the X-ray photoelectron spectroscopic (XPS) data. The ITO:Zr work function was enhanced from 5.3 eV to 5.16 eV with the variation of ITO:Zr bi-layers from 15/65 to 15/125 nm, respectively. Front barrier height in SHJ solar cells can be modified by using TCO films with high work function. The SHJ solar cells were fabricated by employing the ITO:Zr bi-layer as front anti-reflection coating. The SHJ solar cells fabricated on ITO:Zr bi-layer with the thickness of 15/105 nm showed the best photo-voltage parameters as; Voc = 739 mV, Jsc = 39.12 mA/cm2, FF = 75.97%, η = 21.96%.

中文翻译：

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ITO：由反应性 O2 和 Ar 等离子体制备的具有高功函数的用于硅异质结太阳能电池的 Zr 双层

摘要 我们报告了基于活性氧 (O2) 和氩 (Ar) 等离子体的 ITO:Zr 双层对硅异质结 (SHJ) 太阳能电池的影响。反应性 O2 溅射 ITO:Zr 的目的是提高霍尔迁移率和功函数，而基于 Ar 的 ITO:Zr 薄膜在保持良好的电气特性方面起着重要作用。基于活性氧的 ITO:Zr 薄膜的厚度固定在 15 nm，而基于 Ar 的薄膜的厚度分别从 65 到 125 nm 不等。分别由 O2 和 Ar 等离子体沉积的厚度为 15/105 nm 的 ITO:Zr 双层显示最低电阻率为 2.358 × 10−4 Ω cm，高霍尔迁移率为 39.3 cm2/V·s。所有 ITO:Zr 双层在可见光波长 (380–800 nm) 区域均显示出超过 80% 的平均透射率。ITO的工作功能：Zr 双层由 X 射线光电子能谱 (XPS) 数据计算。随着 ITO:Zr 双层分别从 15/65 到 15/125 nm 的变化，ITO:Zr 功函数从 5.3 eV 增强到 5.16 eV。SHJ 太阳能电池的前势垒高度可以通过使用具有高功函数的 TCO 薄膜来修改。SHJ太阳能电池是通过采用ITO：Zr双层作为前抗反射涂层制造的。在厚度为 15/105 nm 的 ITO:Zr 双层上制造的 SHJ 太阳能电池显示出最佳的光电压参数：Voc = 739 mV，Jsc = 39.12 mA/cm2，FF = 75.97%，η = 21.96%。SHJ 太阳能电池的前势垒高度可以通过使用具有高功函数的 TCO 薄膜来修改。SHJ太阳能电池是通过采用ITO：Zr双层作为前抗反射涂层制造的。在厚度为 15/105 nm 的 ITO:Zr 双层上制造的 SHJ 太阳能电池显示出最佳的光电压参数：Voc = 739 mV，Jsc = 39.12 mA/cm2，FF = 75.97%，η = 21.96%。SHJ 太阳能电池的前势垒高度可以通过使用具有高功函数的 TCO 薄膜来修改。SHJ太阳能电池是通过采用ITO：Zr双层作为前抗反射涂层制造的。在厚度为 15/105 nm 的 ITO:Zr 双层上制造的 SHJ 太阳能电池显示出最佳的光电压参数：Voc = 739 mV，Jsc = 39.12 mA/cm2，FF = 75.97%，η = 21.96%。