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Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices
Bulletin of the Russian Academy of Sciences: Physics Pub Date : 2020-06-15 , DOI: 10.3103/s1062873820050391 D. A. Zhukov , A. I. Krikunov , V. V. Amelichev , D. V. Kostyuk , S. I. Kasatkin
中文翻译:
具有巨大磁阻效应的磁致伸缩电子器件的磁致伸缩纳米结构。
更新日期:2020-06-15
Bulletin of the Russian Academy of Sciences: Physics Pub Date : 2020-06-15 , DOI: 10.3103/s1062873820050391 D. A. Zhukov , A. I. Krikunov , V. V. Amelichev , D. V. Kostyuk , S. I. Kasatkin
Abstract
The results are presented from experimental studies of the magnetostrictive and magnetoresistive properties of a multilayer Ta/FeNiCo/CoFe/Cu/CoFe/FeNiCo/FeMn/Ta nanostructure formed on an oxidized silicon substrate. The effect mechanical deformation has on the electrophysical parameters of the nanostructure is investigated. Conclusions and prospects for using magnetoresistive nanostructures with a magnetostrictive effect in elements of magnetic straintronics are formulated.中文翻译:
具有巨大磁阻效应的磁致伸缩电子器件的磁致伸缩纳米结构。