ZnO nanophosphor co-doped with Ce, Eu and Tb [Zn 1−x–y–z O:Ce x Eu y Tb z (x, y and z = 0.1, 0.5, and 1.0 mol.%)] was prepared by the co-precipitation method followed by sintering in the air at 700 °C. The powder XRD spectrum could be indexed using the JCPDC File No. 36-1451 implying that the doping levels investigated in the present study did not change the basic wurtzite crystal structure of the ZnO. The absence of any independent phases of the Ce, Eu and Tb confirmed the incorporation of these dopants in the ZnO lattice. The dopants could enter the ZnO lattice interstitially or/and substitutional. The substitutional incorporation could result in the development of strain in the unit cell as the radii of all the dopants are greater than Zn. This strain could be responsible for the observed shift in the peak positions of diffraction peaks; the observed shift was ~ 0.20° (towards the lower side) for the diffraction peak with (hkl) value (101) for ZnO doped with 0.5 mol.% Ce, Eu and Tb. On the other hand, interstitial substitution could result in the creation of the defects like vacancies. These defects could create the inter-band defect states which could emit in the visible region (400–700 nm).Emission in the visible region was observed when excited with the 280,300 and 380 nm radiation from a Xe lamp; the 280 and 300 nm excitations resulted in broad emission centered around ~ 510 nm while relatively sharp emission peaks were observed with 380 nm radiation; the emission intensity was found to be dependent on the dopant concentration. The chromaticity color coordinates (x and y) of the observed broad emission were calculated using the data from the emission spectrum. The best calculated values were: x = 0.33 and y = 0.34 for ZnO co-doped with Ce 0.5, Eu 0.1 and Tb 0.1 mol.%; these “x and y” values being very close to those of the “sunlight at noon” (x = 0.33 and y = 0.33), indicate the potential of this material for the realization of the white light sources.

中文翻译：

---

掺杂 Ce、Eu 和 Tb 的 ZnO 纳米磷 Co

ZnO 纳米磷光体与 Ce、Eu 和 Tb 共掺杂 [Zn 1-x-y-z O:Ce x Eu y Tb z (x, y and z = 0.1, 0.5, and 1.0 mol.%)]共沉淀法，然后在 700 °C 的空气中烧结。粉末 XRD 光谱可以使用 JCPDC 文件编号 36-1451 进行索引，这意味着本研究中研究的掺杂水平不会改变 ZnO 的基本纤锌矿晶体结构。Ce、Eu 和 Tb 的任何独立相的缺失证实了这些掺杂剂在​​ ZnO 晶格中的结合。掺杂剂可以填隙地或/和置换地进入 ZnO 晶格。由于所有掺杂剂的半径都大于 Zn，置换掺入可能导致晶胞中应变的发展。这种应变可能是观察到的衍射峰峰位置偏移的原因；对于掺杂有 0.5 mol.% Ce、Eu 和 Tb 的 ZnO，观察到的位移为 ~ 0.20°（朝向下侧），具有 (hkl) 值 (101) 的衍射峰。另一方面，间隙置换可能导致产生空位等缺陷。这些缺陷会产生能在可见光区（400-700 nm）发射的带间缺陷态。当用氙灯的 280,300 和 380 nm 辐射激发时，观察到可见光区的发射；280 和 300 nm 激发导致以 ~ 510 nm 为中心的宽发射，而在 380 nm 辐射下观察到相对尖锐的发射峰；发现发射强度取决于掺杂剂浓度。使用来自发射光谱的数据计算观察到的宽发射的色度颜色坐标（x和y）。最佳计算值是：对于与 Ce 0.5、Eu 0.1 和 Tb 0.1 mol.% 共掺杂的 ZnO，x = 0.33 和 y = 0.34；这些“x 和 y”值非常接近“中午的阳光”（x = 0.33 和 y = 0.33）的值，表明这种材料具有实现白光源的潜力。