Indium phosphide (InP) surfaces are greatly affected by ionic bombardment. We investigate the resulting surface perturbation through the use of the complementary analytical techniques of electrochemistry and X-ray photoelectron spectroscopy (XPS). Following bombardment, modifications to the surface were identified by a reduction in the dark open circuit potential in comparison to the pristine state. Through XPS studies, it was found that the sputtered surface was enriched with a metallic-like In contribution, which oxidized upon exposure to air. Cyclic voltammetry measurements confirmed this observation, with initial cathodic features related to an oxidized metallic In-enriched layer on the InP surface. Repeated cyclic voltammetry experiments resulted in the formation of a more In-rich overlayer due to a specific oxidation/reduction phenomenon. This behavior is very similar to that obtained by cathodic decomposition on InP surfaces.

磷化铟（InP）表面受离子轰击的影响很大。我们通过使用电化学和X射线光电子能谱（XPS）的互补分析技术来研究由此产生的表面扰动。轰击后，通过与原始状态相比暗开路电位的降低来识别表面的改性。通过XPS研究发现，溅射后的表面富含金属样的In元素，该元素在暴露于空气中会氧化。循环伏安法测量证实了该观察结果，其初始​​阴极特征与InP表面上的氧化的金属富In层有关。重复的循环伏安法实验由于特定的氧化/还原现象而导致形成了更加富In的覆盖层。