Thin film of Barium–Strontium–Titanate (Ba_xSr_1−xTiO₃) has been fabricated through sol–gel spin-coating process with optimized value of ‘x’ for non-volatile memory application. The Metal–Ferroelectric–Semiconductor (MFS) thin-film structures have been prepared using Barium–Strontium–Titanate (BST) with various Barium/Strontium (Ba/Sr) molar concentrations. The BST films prepared through sol–gel process are annealed at 650 °C in nitrogen ambient. The structural and electrical characterizations have been carried out for each of the samples. From the characterization, it is realized that the BST films are having significant changes in its electrical and structural properties on changing the molar concentration of Barium and Strontium. It has been observed that the crystallinity of the film, refractive index, leakage current (I−V), capacitance vs. voltage (C−V) relation, and the charge vs. voltage (Q–V) relation vary with the varying values of ‘x’ in Ba_xSr_1−xTiO₃ and have been presented graphically. The maximum memory window up to 9 V with average leakage current within the range of 100 nA and minimum of 10 pA for 0 V has been achieved for the sweep voltage of + 15 V to -15 V. Memory window and leakage current are optimized and discussed. Endurance testing through PUND (positive up negative down) pulse shows that the samples can sustain up to 10¹⁰ iteration pulses. These findings indicate the use of optimized BST film for ferroelectric non-volatile memory applications through sol–gel process.

钛酸锶钡薄膜（Ba _x Sr _1-x TiO ₃）是通过溶胶-凝胶旋涂工艺制造的，具有针对非易失性存储器应用的最佳值“ x”。金属-铁电-半导体（MFS）薄膜结构是使用钡-锶（Ba / Sr）摩尔浓度的钡-锶-钛酸盐（BST）制备的。通过溶胶-凝胶法制备的BST薄膜在650°C的氮气环境中退火。已经对每个样品进行了结构和电学表征。通过表征，认识到BST膜在改变钡和锶的摩尔浓度时其电和结构性质具有显着变化。已经发现，膜的结晶度，折射率，漏电流（I - V），电容与电压（C - V）的关系以及电荷与电压（Q–V）的关系随Ba _x Sr _1-x TiO ₃中'x'的变化而变化，并已用图形表示。对于+ 15 V至-15 V的扫描电压，已实现最大9 V的存储器窗口（平均泄漏电流在100 nA范围内）和最小10 pA（0 V）。优化并优化了存储器窗口和泄漏电流讨论过。通过PUND（正向上负向下）脉冲进行的耐力测试表明，样品最多可以承受10 ¹⁰迭代脉冲。这些发现表明，通过溶胶-凝胶工艺将优化的BST膜用于铁电非易失性存储应用。