Abstract Antimony selenide (Sb2Se3) based solar cell technology has experienced rapid development with demonstrated cell efficiency reaching 9.2% for devices in substrate configuration, hence motivating more intense research investigations. Though the effect of crystallographic orientation in this non-cubic material on device performance is now well understood, the influence of composition and intrinsic defects remains debatable. In this work we describe the fabrication and device characteristics of Sb2Se3 solar cells designed in the substrate configuration (SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO). Notably, Sb2Se3 absorber layers with a predominant (hk0) orientation were deposited in a single step by e-beam evaporation of pre synthesized bulk source material. As grown precursor Sb2Se3 thin films were subjected to reactive thermal annealing treatment in the presence of Se source at different temperatures for enhancing their crystalline quality and balancing their stoichiometry. Analysis of the completed solar cells indicated improved efficiencies post reactive thermal annealing process, with the best performing devices exhibiting a power conversion efficiency (η) of ~4.34% for an absorber annealed at a temperature of 350 °C. The improved efficiency is ascribed to the observed changes in chemical composition of the absorber layer and the possible formation of related beneficial antisite defects.

中文翻译：

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具有 (hk0) 取向的 Sb2Se3 薄膜的基板配置中的高效 Sb2Se3/CdS 平面异质结太阳能电池

摘要 基于硒化锑 (Sb2Se3) 的太阳能电池技术经历了快速发展，在基板配置的器件中已证明电池效率达到 9.2%，因此激发了更深入的研究。尽管这种非立方体材料的晶体取向对器件性能的影响现在已经很好地理解了，但成分和固有缺陷的影响仍然存在争议。在这项工作中，我们描述了在基板配置 (SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO) 中设计的 Sb2Se3 太阳能电池的制造和器件特性。值得注意的是，具有主要 (hk0) 取向的 Sb2Se3 吸收层通过预先合成的块状源材料的电子束蒸发在一步中沉积。随着生长的前驱体 Sb2Se3 薄膜在不同温度下在 Se 源存在下进行反应热退火处理，以提高其结晶质量并平衡其化学计量。对完成的太阳能电池的分析表明，反应热退火过程后效率提高，性能最佳的器件在 350°C 温度下退火的吸收器的功率转换效率 (η) 为 ~4.34%。效率的提高归因于观察到的吸收层化学成分的变化以及相关有益反位缺陷的可能形成。对完成的太阳能电池的分析表明，反应热退火过程后效率提高，性能最佳的器件在 350°C 温度下退火的吸收器的功率转换效率 (η) 为 ~4.34%。效率的提高归因于观察到的吸收层化学成分的变化以及相关有益反位缺陷的可能形成。对完成的太阳能电池的分析表明，反应热退火过程后效率提高，性能最佳的器件在 350°C 温度下退火的吸收器的功率转换效率 (η) 为 ~4.34%。提高的效率归因于观察到的吸收层化学成分的变化以及相关有益反位缺陷的可能形成。