Abstract Passivation of n-type and p-type monocrystalline CZ Si wafers (both polished and textured) with silicon oxide layers prepared by thermal (TO), chemical (CO) and plasma (PO) techniques have been extensively investigated from the measurement of minority carrier lifetime (τ) by transient electrical photoresponse method, density of interface states (NSS) measurement by capacitance – voltage study and silicon oxidation states by X-ray photoelectron spectroscopy (XPS) study of the SiO2/Si interface. It has been observed that NSS and τ have an inverse relation but the dependence is not linear. The method (TO, CO or PO) of oxide layer development has been found to play a crucial role to control the passivation of the c-Si wafer surface. It has been observed that the thermally grown oxide layer (TO) is superior among three oxide layers for all the different c-Si surfaces. Very low density of interface states (

中文翻译：

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TOPCon 太阳能电池背面钝化用不同工艺制备的 SiOx 层性能研究

摘要 通过热 (TO)、化学 (CO) 和等离子体 (PO) 技术制备的带有氧化硅层的 n 型和 p 型单晶 CZ Si 晶片（抛光和纹理化）的钝化已从少数载流子寿命 (τ) 通过瞬态电光响应方法、通过电容测量界面态密度 (NSS) - 电压研究和通过 X 射线光电子能谱 (XPS) 研究 SiO2/Si 界面的硅氧化态。已经观察到 NSS 和 τ 具有反比关系，但相关性不是线性的。已发现氧化层开发方法（TO、CO 或 PO）对于控制 c-Si 晶片表面的钝化起着至关重要的作用。已经观察到，对于所有不同的 c-Si 表面，热生长的氧化物层 (TO) 在三个氧化物层中是优越的。非常低的界面态密度（