Abstract Although MoS2 film plays an important role in reducing friction, however, it will collapse down at higher loads. To prevent the failure of MoS2 under higher load, in present work, structure bilayer a-C:H/MoS2 films were prepared via PVD/PECVD hybrid method. The component, bonding structure, morphology as well as trichology and mechanical properties of the films were investigated, respectively. The results show that MoS2 film stack uniformly on a-C:H film's surface. Due to the special design of the structure, the bilayer a-C:H/MoS2 film show a sufficient decrease of friction coefficient compared with that of a-C:H film. In addition, the superlubricity state was achieved at very high loads, which can be ascribed to the low shear force and incommensurability contact between adjacent MoS2 layers. And a-C:H film here plays as foundation stone of supporting MoS2 film and enforcing its adhesion on silicon substrates, which inhibits slipping away of MoS2 film under shear force. Our work can open a new mind to help design the high loads capability of MoS2 based films, which can break the deadlock of the bad loading ability and achieve superlubricity at even higher loads for MoS2 based films.

中文翻译：

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双层 aC:H/MoS2 薄膜在开放大气中实现超润滑

摘要 虽然二硫化钼薄膜在降低摩擦方面起着重要作用，但它在较高的载荷下会坍塌。为了防止 MoS2 在较高负载下失效，在目前的工作中，通过 PVD/PECVD 混合方法制备了结构双层 aC:H/MoS2 薄膜。分别研究了薄膜的组分、键合结构、形貌以及毛发和力学性能。结果表明，MoS2 薄膜在 aC:H 薄膜表面均匀堆叠。由于结构的特殊设计，与aC:H薄膜相比，双层aC:H/MoS2薄膜表现出足够的摩擦系数降低。此外，超润滑状态是在非常高的负载下实现的，这可归因于低剪切力和相邻 MoS2 层之间的不可公度接触。和 aC：此处的 H 膜作为支撑 MoS2 膜并加强其在硅衬底上的附着力的基石，从而抑制了 MoS2 膜在剪切力下的滑落。我们的工作可以打开一个新的思路来帮助设计基于 MoS2 的薄膜的高负载能力，这可以打破负载能力差的僵局，并在更高的负载下实现基于 MoS2 的薄膜的超润滑。