Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome short-channel effects in nanoscale devices. However, with continuous technology scaling, the variability of device parameters also increases. Indeed, process, voltage, and temperature (PVT) variations affect the performance of GNR devices because of their small size. Moreover, the bandgap of GNRs is strongly affected by the number of carbon atoms across the channel width. This paper accurately evaluates the impact of such PVT variations on the performance of circuits based on Schottky barrier (SB)-type GNR field-effect transistors (SB-GNRFETs) in terms of their timing parameters, power, and energy–delay product (EDP). Extensive simulations and stability analysis are performed on both flip-flop and conventional six-transistor static random-access memory (6T SRAM) cells made using SB-GNRFETs under these variations. A statistical analysis of the impact of the PVT variations on the SB-GNRFET-based flip-flop is also performed using Monte Carlo simulations, considering the variation of one or all of the parameters, with or without line-edge roughness effects.

中文翻译：

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使用肖特基势垒型GNRFET的存储单元的变化感知设计

石墨烯纳米带（GNR）是硅的良好替代材料，可克服纳米级器件中的短通道效应。但是，随着技术的不断发展，设备参数的可变性也会增加。实际上，工艺，电压和温度（PVT）的变化会因其尺寸小而影响GNR设备的性能。此外，GNR的带隙在通道宽度上受到碳原子数的强烈影响。本文根据时序参数，功率和能量延迟乘积（EDP）准确评估了此类PVT变化对基于肖特基势垒（SB）型GNR场效应晶体管（SB-GNRFET）的电路性能的影响。 ）。在这些变型下，对使用SB-GNRFET制成的触发器和常规六晶体管静态随机存取存储器（6T SRAM）单元均进行了广泛的仿真和稳定性分析。还使用蒙特卡洛模拟，考虑了一个或所有参数的变化（有无线边缘粗糙度影响），对PVT变化对基于SB-GNRFET的触发器的影响进行了统计分析。