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Self-assembled NiS-SnS Heterostructure via Facile Successive Adsorption and Reaction Method for High-Performance Solid-State Asymmetric Supercapacitors
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.tsf.2020.138138
Niraj Kumar , Dhananjay Mishra , Seung Yeob Kim , Sung Hun Jin

Abstract Herein, a green, scalable and template-free deposition of self-assembled NiS-SnS (NTS) heterostructure is proposed by using SILAR (successive ionic layer adsorption and reaction method on a nickel foam substrate). In the assembled solid-state asymmetric supercapacitor devices, electrode materials of NTS hetero-structure exhibit remarkable high specific capacitance value of 1653 Fg−1 at a current density of 1 Ag−1, significant-high energy density of 83 Whkg−1 at a power density of 117 Wkg−1 with excellent rate capability and cyclic stability (98 % after 4000 cycles). Moreover, NTS heterostructures with high performance are highly efficient to lighten commercial light-emitting diode, substantiating that SILAR based formation of NTS hetero-structure is promising for the next generation superior supercapacitor devices.

中文翻译:

通过简便的连续吸附和反应方法自组装 NiS-SnS 异质结构用于高性能固态非对称超级电容器

摘要 在此,提出了一种使用 SILAR(在泡沫镍基材上连续离子层吸附和反应方法)的自组装 NiS-SnS (NTS) 异质结构的绿色、可扩展和无模板沉积。在组装的固态非对称超级电容器器件中,NTS 异质结构的电极材料在 1 Ag-1 的电流密度下表现出显着的 1653 Fg-1 比电容值,在 83 Whkg-1 的显着高能量密度下功率密度为 117 Wkg-1,具有出色的倍率性能和循环稳定性(4000 次循环后为 98%)。此外,具有高性能的 NTS 异质结构可以非常有效地减轻商业发光二极管的重量,证明基于 SILAR 的 NTS 异质结构的形成有希望用于下一代超级电容器器件。
更新日期:2020-09-01
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