The In_x Al_1-xN heterojunction exhibits interesting features that make it a promising candidate for designing solar cells. Nevertheless, there are no studies about how the three types of band alignment (straddled, staggered and broken gap) affect the In_x Al_1-x N heterojunction. In this work, In_x Al_1-x N on commercial p-type silicon heterojunction was studied using computational simulation in solar cells. The main objective was to study the band alignment to maximize the efficiency of the cell for building experimental devices in the future. The thickness of the silicon layer remained constant at 500 μm. The thickness of In_x Al_1-x N was varied between 10 nm and 100 nm, and the concentration of InN between 20% and 90%. It was found that the band alignment impacted on the open circuit voltage, the short circuit current density, the efficiency of the solar cell, and the quantum efficiency. It is theoretically concluded that a n-In_x Al_1-x N/p-Si type heterojunction solar cell can be designed, with a maximum efficiency of 26.6%, adjusting the thickness of the InAlN layer to 10 nm and the InN concentration of 70%. This valuable result shows a good prospect for the manufacture of experimental devices.

In _x Al _1-x N异质结具有有趣的特征，使其成为设计太阳能电池的有前途的候选者。但是，尚无关于三种类型的能带对准（跨，交错和间断间隙）如何影响In _x Al _1-x N异质结的研究。在这项工作中，使用计算模拟太阳能电池研究了商用p型硅异质结上的In _x Al _1- xN。主要目标是研究能带排列，以在将来最大程度地提高构建实验装置的电池效率。硅层的厚度保持恒定在500μm。In _x Al _1-x的厚度N在10 nm和100 nm之间变化，InN的浓度在20％和90％之间。发现能带取向影响开路电压，短路电流密度，太阳能电池的效率和量子效率。从理论上可以得出结论，可以设计n-In _x Al _1-x N / p-Si型异质结太阳能电池，最大效率为26.6％，将InAlN层的厚度调整为10 nm，InN的浓度为70％。这一有价值的结果显示了制造实验装置的良好前景。