Although optically transparent semiconductor diodes and electronics can have a wide range of important potential applications, the development bottleneck is encountered due to the lack of a transparent semiconductor system that can be either p- or n-type. In this work, we report our design and success in the development of a novel AgCuI alloy semiconductor system that can be either p-type or n-type depending on Ag concentration. We have studied the electronic and optical properties of AgCuI alloyed thin films (Ag_xCu_1-xI, 0 ≤ x ≤ 1). The crystal structure is of γ-CuI for Cu rich, while it is of β-AgI for Ag rich. By tuning Ag/Cu composition in thin films, we could engineer the energy bandgap from 2.78 to 3.02 eV with excellent transparency. Significantly, all the Ag_xCu_1-xI alloy films are direct-gap semiconductors showing PL emission from exciton band-band transition and the wavelength is found tunable with respect to composition. The electronic valence band, conduction band and Fermi level positions determined from ultraviolet photoelectron spectroscopy show continuous shifts with respect to composition, marking a p-type (Cu rich) to n-type (Ag rich) conduction conversion. The composition analysis presented a full picture of energy levels for Ag_xCu_1-xI alloys, which can serve as reference in band alignments. The achievement in both p-type and n-type for a transparent AgCuI semiconductor system, the light emitting property and tunable electronic bands with desired electrical conductivity in Ag_xCu_1-xI alloys may offer new opportunities in invisible electronics and optoelectronic applications.

尽管光学透明的半导体二极管和电子产品可以具有广泛的重要潜在应用，但是由于缺少可以是p型或n型的透明半导体系统，因此遇到了开发瓶颈。在这项工作中，我们报告了我们的设计和开发成功的新型AgCuI合金半导体系统的过程，该系统可以根据Ag浓度而为p型或n型。我们已经研究了AgCuI合金薄膜（Ag _x Cu _1-x I，0≤x≤1）的电子和光学性能。富铜的晶体结构为γ-CuI，富银的晶体结构为β-AgI。通过调节薄膜中的Ag / Cu成分，我们可以将能带隙从2.78 eV设计到具有出色的透明性。值得注意的是，所有Ag _xCu _1-x I合金膜是直接间隙半导体，显示出来自激子带-跃迁的PL发射，并且发现波长相对于组成是可调的。由紫外光电子能谱确定的电子价带，导带和费米能级位置显示出相对于组成的连续变化，标志着从p型（富铜）到n型（富银）的传导转换。成分分析显示了Ag _x Cu _1-x I合金的能级水平，可以作为能带排列的参考。透明AgCuI半导体系统在p型和n型方面的成就，在Ag _x中具有所需电导率的发光特性和可调电子带Cu _1-x I合金可能在隐形电子和光电应用中提供新的机会。