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Filling of Nanometric Pores with Polymer by Initiated Chemical Vapor Deposition.
Macromolecular Rapid Communications ( IF 4.6 ) Pub Date : 2020-06-09 , DOI: 10.1002/marc.202000200
Manon Van-Straaten 1, 2 , Amal Ben Hadj Mabrouk 1 , Marc Veillerot 1 , Christophe Licitra 1 , Franck D'Agosto 2 , Vincent Jousseaume 1
Affiliation  

The integration of porous thin films using microelectronic compatible processes sometimes requires the protection of the interior of the pores during the critical integration steps. In this paper, the polymerization of neo‐pentyl methacrylate (npMA) is performed via initiated chemical vapor deposition (iCVD) on a porous organosilicate (SiOCH) and on a dense SiOCH. The characterizations by Fourier‐transform infrared spectroscopy, spectroscopic ellipsometry, and time‐of‐flight secondary ion mass spectrometry of the different stacks show that iCVD is a powerful technique to polymerize npMA in the nanometric pores and thus totally fill them with a polymer. The study of the pore filling for very short iCVD durations shows that the polymerization in the pores is complete in less than ten seconds and is uniform in depth. Then, the poly(npMA) film growth continues on top of the filled SiOCH layer. These characteristics make iCVD a straightforward and very promising alternative to other infiltration techniques in order to fill the porosity of microporous thin films.

中文翻译:

通过引发的化学气相沉积用聚合物填充纳米孔。

使用微电子兼容工艺对多孔薄膜进行集成有时需要在关键的集成步骤中保护孔的内部。在本文中,通过在多孔有机硅酸盐(SiOCH)和致密SiOCH上引发化学气相沉积(iCVD)进行甲基丙烯酸新戊酯(npMA)的聚合。傅立叶变换红外光谱,椭圆偏振光谱和飞行时间二次离子质谱对不同烟囱的表征表明,iCVD是一种强大的技术,可在纳米孔中聚合npMA,从而完全填充聚合物。对非常短的iCVD持续时间的孔填充的研究表明,孔中的聚合在不到十秒的时间内完成,并且深度均匀。然后,多晶硅(npMA)薄膜在填充的SiOCH层顶部继续生长。这些特征使iCVD成为其他渗透技术的直接且非常有前途的替代方法,以填补微孔薄膜的孔隙率。
更新日期:2020-07-20
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