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Anisotropic field dependence of the electronic transport in superconducting FeSe thin films
Superconductor Science and Technology ( IF 3.6 ) Pub Date : 2020-06-08 , DOI: 10.1088/1361-6668/ab9001
R Schneider , A G Zaitsev , D Fuchs , R Hott

Electronic transport measurements were carried out on c -axis oriented epitaxial FeSe thin films in static magnetic fields up to 14 T parallel to the crystallographic c -axis and parallel to the ab -plane. The temperature dependence of the upper critical fields ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn1.gif] {$B_{c2}^c$} and ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn2.gif] {$B_{c2}^{ab}$} was determined from the field dependence of the resistivity. While ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn3.gif] {$B_{c2}^c$} was orbitally limited, the larger ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn4.gif] {$B_{c2}^{ab}$} was paramagnetically limited. The anisotropy ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn5.g...] {${\gamma _B}$}

中文翻译:

FeSe薄膜中电子输运的各向异性场相关性

在平行于晶体学c轴且平行于ab平面的不超过14 T的静磁场中,对c轴取向的外延FeSe薄膜进行电子传输测量。上临界场的温度依赖性## IMG ## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn1.gif] {$ B_ {c2} ^ c $}和## IMG ## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn2.gif] {$ B_ {c2} ^ {ab} $}是从该字段中确定的电阻率的依赖性。尽管## IMG ## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn3.gif] {$ B_ {c2} ^ c $}在轨道上受到限制,但较大的# #IMG ## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn4.gif] {$ B_ {c2} ^ {ab} $}受顺磁限制。各向异性## IMG ## [http://ej.iop.org/images/0953-2048/33/7/075011/sustab9001ieqn5.g ...
更新日期:2020-06-08
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