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Coupled thermo–electrical analysis of highly scaled GaN micro-LEDs with meshed hybrid conductors
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-06-08 , DOI: 10.1088/1361-6641/ab8609
Yuseop Shin 1 , Junho Bae 1 , Jinho Lim 1 , Dasom Jeon 1 , Ilsoo Kim 2 , Taeil Jung 2 , Myungsoo Han 2 , Seunghyun Lee 1
Affiliation  

Display technology with ultrafine pixels for near-eye application is a rapidly growing field due to the recent emergence of augmented/mixed reality. With the constant demand for high energy efficiency, long lifetime, and high luminosity, micro-LED displays based on compound semiconductors are promising candidates for such applications. However, miniaturizing LEDs results in significant drawbacks in terms of their quantum efficiency, current injection efficiency, and heat extraction. With relatively low device resistance compared to that of liquid crystals or organic LEDs, micro-LEDs are also more susceptible to the effects of parasitic resistance. In this study, gallium nitride based micro-LED displays with very small pixels (5 μ m pixel, 10 μ m pitch) are fabricated to study the thermal–electrical effect of meshed hybrid conductors on the optical emission efficiency. In situ thermographic imaging with I–V measurement confirms a significant trade-off among hea...

中文翻译:

带网状混合导体的大规模GaN micro-LED的热电耦合分析

由于近来增强/混合现实的出现,具有用于近眼应用的超细像素的显示技术是快速增长的领域。随着对高能效,长寿命和高发光度的不断需求,基于化合物半导体的micro-LED显示器成为此类应用的有前途的候选者。然而,使LED小型化在其量子效率,电流注入效率和热提取方面导致明显的缺点。与液晶或有机LED相比,由于具有相对较低的器件电阻,微型LED也更容易受到寄生电阻的影响。在这项研究中,基于氮化镓的micro-LED显示器具有非常小的像素(5μm像素,制作10微米间距)以研究网状混合导体对光发射效率的热电效应。使用IV测量的原位热像成像技术在热量...
更新日期:2020-06-08
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