The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, in Tahoe, California. This workshop brings together reliability engineers and researchers from around the world, to exchange ideas over four days in a relaxed, friendly, and informal atmosphere. The workshop focuses on the recent advances in research concerning semiconductor device reliability and its different challenges. Topics include front-end-of-line reliability issues (bias temperature instability, hot-carrier degradation, time dependent dielectric breakdown), back-end-of-line/middle-of-line degradation effects (electromigration, stress migration, time dependent dielectric breakdown) as well as memory reliability, chip to package interaction, degradation effects in wide-bandgap-materials and high-voltage devices, and many others.

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客座编辑 IEEE 国际综合可靠性研讨会 (IIRW) 2019

IEEE 国际综合可靠性研讨会 (IIRW) 是一项独特的活动，每年都会在加利福尼亚州塔霍美丽的落叶湖举行。本次研讨会汇集了来自世界各地的可靠性工程师和研究人员，在为期四天的轻松、友好和非正式的氛围中交流想法。研讨会重点介绍有关半导体器件可靠性及其不同挑战的研究的最新进展。主题包括前端可靠性问题（偏置温度不稳定性、热载流子退化、随时间变化的介电击穿）、后端/中间线路退化效应（电迁移、应力迁移、随时间变化）介电击穿）以及内存可靠性、芯片到封装的相互作用，