In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The breakdown point transfer technique (BPT) is used to transfer the breakdown point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped Ntype silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance ( $R_{on,sp}$ ). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the $R_{on,sp}$ is reduced from 14.24m ${\Omega }\cdot $ cm² to 13.92m ${\Omega }\cdot $ cm².

中文翻译：

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具有部分 SiC/Si 异质结的新型功率 MOSFET 通过击穿点转移 (BPT) 端子技术提高击穿电压

在本文中，本文首次提出了一种新型垂直双扩散金属氧化物半导体场效应晶体管（VDMOS），在漏极下方具有部分 SiC/Si 异质结（Partial SiC/Si VDMOS）。击穿点转移技术（BPT）用于在Pwell和Ndrift区域的界面将击穿点从曲率半径大转移到曲率半径小，导致电场纵向峰值升高，以及更高的击穿电压（BV） 可以获得。同时，高掺杂N型硅沟槽的形成缓解了电流流经SiC/Si异质结引起的界面态问题，进一步优化了整个SiC/Si异质结（SiC/Si VDMOS）。硅的极限线已被打破，因为结果在BV 和特定的导通电阻（ $R_{on,sp}$ ）。与传统的 Si VDMOS 相比，BV 从 238V 增加到 342V，并且 $R_{on,sp}$ 从 14.24m 减少 ${\Omega }\cdot $ 厘米²至 13.92m ${\Omega }\cdot $ 厘米²。