Abstract Transition metal dichalcogenides (TMDs) with layered structures possess excellent electrical and thermal transport properties. In this work, bulk VSe2 sample with layered structure was fabricated by a conventional solid-state reaction method followed with spark plasma sintering process. The microstructure as well as thermoelectric properties were systematically studied. Bulk VSe2 possesses high electrical conductivity but relatively low Seebeck coefficient, and sample along the direction parallel to the pressing axis has a lower thermal conductivity. The maximum ZT value of 0.023 was obtained at 700 K for sample along the direction parallel to the pressing axis.

中文翻译：

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层状结构体VSe2的制备及热电性能

摘要 具有层状结构的过渡金属二硫属化物 (TMD) 具有优异的电和热传输性能。在这项工作中，具有层状结构的块状 VSe2 样品通过传统的固态反应方法和放电等离子体烧结工艺制备。系统地研究了显微结构和热电性能。块体VSe2具有较高的导电性，但塞贝克系数相对较低，样品沿平行于挤压轴的方向具有较低的导热性。样品在 700 K 下沿平行于压制轴的方向获得了 0.023 的最大 ZT 值。