Linear and nonlinear optical properties of GaSb quantum ring inside Al x Ga 1 − x As/GaAs/Al x Ga 1 − x As quantum well (QW) and AlAs/GaAs/InGaAs/AlAs double QW have been theoretically investigated. The effects of the Al concentration in the barrier, the widths of the layers, the position of the quantum ring inside the wells and the incident optical intensity on linear and nonlinear absorption and refractive index, associated to the ground excitonic state, have been explored. We found that by varying the different parameters of the studied structures and the incident optical intensity, one can manipulate the linear and nonlinear absorption coefficient and refractive index. These results make the studied systems a promising candidate for application in tunable nano-optoelectronic devices.

中文翻译：

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在 AlGaAs/GaAs/AlGaAs 量子阱和 AlAs/GaAs/InGaAs/AlAs 双量子阱中 GaSb 量子环的线性和非线性光学特性的操纵

已经从理论上研究了 Al x Ga 1 - x As/GaAs/Al x Ga 1 - x As 量子阱 (QW) 和 AlAs/GaAs/InGaAs/AlAs 双 QW 内的 GaSb 量子环的线性和非线性光学特性。已经探索了势垒中的 Al 浓度、层的宽度、阱内量子环的位置和入射光强度对线性和非线性吸收和折射率的影响，与基激子态相关。我们发现，通过改变所研究结构的不同参数和入射光强度，可以操纵线性和非线性吸收系数和折射率。这些结果使所研究的系统成为可调谐纳米光电器件应用的有希望的候选者。