Thin films of CdO incorporated with different amounts of carbon element have been deposited on glass substrates by using the vacuum thermal evaporation method aiming at improving their transparent conducting (TC) properties. The structural and opto-electrical properties of the host CdO films were systematically studied. X-ray diffraction and optical investigations confirmed the inclusion of C species in the CdO lattice. The obtained results were explained through the occupation of interstitial positions and structural vacancies of the host CdO lattice by C species. It was observed that the inclusion of carbon into the CdO lattice blue-shifted the optical band gap by $${\sim }5{-}7$$ ∼ 5 - 7 %, which was attributed to the Moss–Burstein (B–M) effect. The electrical studies showed that the carrier mobility increased steadily with the increase in the C% inclusion level, so that with 5 wt% it attained $${\sim }7.5$$ ∼ 7.5 times the carrier mobility in un-doped CdO. Therefore, the present study showed that the prepared host CdO–C films have controllable TC degenerate semiconducting properties, which could be required in different optoelectronic applications.

中文翻译：

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碳掺入对CdO薄膜透明导电性能的影响

通过使用真空热蒸发方法将掺入不同数量碳元素的 CdO 薄膜沉积在玻璃基板上，旨在提高其透明导电 (TC) 性能。系统地研究了主体 CdO 薄膜的结构和光电特性。X 射线衍射和光学研究证实了 CdO 晶格中包含 C 物质。通过 C 物种占据主体 CdO 晶格的间隙位置和结构空位来解释获得的结果。据观察，将碳包含在 CdO 晶格中使光学带隙蓝移 $${\sim }5{-}7$$ ~ 5 - 7 %，这归因于 Moss-Burstein (B- M) 效果。电学研究表明，载流子迁移率随着 C% 夹杂物水平的增加而稳步增加，因此在 5 wt% 时，它达到了未掺杂 CdO 中载流子迁移率的 7.5 倍~7.5 倍。因此，本研究表明，所制备的主体 CdO-C 薄膜具有可控的 TC 简并半导体特性，这在不同的光电应用中是必需的。