Resistive switching (RS) devices based on self-assembled nanowires (NWs) and nanorods (NRs) represent a fascinating alternative to conventional devices with thin film structure. The high surface-to-volume ratio may indeed provide the possibility of modulating their functionalities through surface effects. However, devices based on NWs usually suffer from low resistive switching performances in terms of operating voltages, endurance and retention capabilities. In this work, we report on the resistive switching behaviour of ZnO NW arrays, grown by hydrothermal synthesis, that exhibit stable, bipolar resistive switching characterized by SET/RESET voltages lower than 3 V, endurance higher than 1100 cycles and resistance state retention of more than 105 s. The physical mechanism underlying these RS performances can be ascribed to nanoionic processes involving the formation/rupture of conductive paths assisted by oxygen-related species in the ZnO active layer. The reported results represent, to the best of our knowledge, the best resistive switching performances observed in ZnO NW arrays in terms of endurance and retention.

中文翻译：

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水热生长的 ZnO 纳米线阵列作为氧空位储层，用于改善电阻开关

基于自组装纳米线 (NW) 和纳米棒 (NR) 的电阻开关 (RS) 器件代表了具有薄膜结构的传统器件的一种引人入胜的替代品。高表面体积比可能确实提供了通过表面效应调节其功能的可能性。然而，基于 NW 的器件在工作电压、耐久性和保持能力方面通常会受到低阻开关性能的影响。在这项工作中，我们报告了通过水热合成生长的 ZnO NW 阵列的电阻开关行为，该阵列表现出稳定的双极电阻开关，其特点是设置 / 复位电压低于 3 V，耐久性高于 1100 次循环和电阻状态保持率更高超过 105 秒。这些 RS 性能背后的物理机制可归因于纳米离子过程，该过程涉及由 ZnO 活性层中的氧相关物质辅助的导电路径的形成/破裂。据我们所知，报告的结果代表了在 ZnO NW 阵列中在耐久性和保持力方面观察到的最佳电阻切换性能。