A strain gradient induced by mechanical bending on a SrTiO₃ substrate is demonstrated, and has a pronounced influence on the carrier density and mobility of the interfacial 2D electron gas at the LaAlO₃/SrTiO₃ heterointerface. Tensile and compressive strain gradients represent two states of upward and downward bending. Under the tensile strain gradient, the carrier density decreases and the mobility has about 200% increase. Conversely, under the compressive strain gradient, the mobility decreases and the carrier density increases by up to 107%. These results demonstrate a range of opportunities to modulate the carrier density and mobility at oxide heterointerface and open up a promising way for further research on application of oxide devices.

中文翻译：

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LaAlO3 / SrTiO3异质界面处的载流子密度和迁移率的应变梯度诱导调制。

证实了由机械弯曲在SrTiO ₃衬底上引起的应变梯度，并且对LaAlO ₃ / SrTiO ₃异质界面处的界面二维电子气的载流子密度和迁移率具有显着影响。拉伸和压缩应变梯度代表向上和向下弯曲的两种状态。在拉伸应变梯度下，载流子密度降低，迁移率增加约200％。相反，在压缩应变梯度下，迁移率下降，载流子密度增加高达107％。这些结果证明了调节氧化物异质界面上载流子密度和迁移率的一系列机会，并为进一步研究氧化物器件的应用开辟了有希望的途径。