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High temperature oxidation behaviors of bulk SiC with low partial pressures of air and water vapor in argon
Corrosion Science ( IF 8.3 ) Pub Date : 2020-09-01 , DOI: 10.1016/j.corsci.2020.108795
Yi Je Cho , Kathy Lu

Abstract Oxidation behaviors of bulk SiC at 1000–1400 °C in Ar-20 vol% H2O-10 vol% air were investigated. The thickness of the passivation oxide layer showed a parabolic increase with time. Dense and uniform layers formed below 1200 °C, whereas pores and cracks were observed at higher temperatures. An analytical model was proposed to estimate the oxide layer growth and SiC mass loss rate. The SiC layer should be effective in retaining the fission products after oxidation by excessive water and air. This work is the first detailed study of SiC layer oxidation during loss of coolant accidents (LOCA) for HTGRs.

中文翻译:

氩气中低空气和水蒸气分压下块状碳化硅的高温氧化行为

摘要 研究了 1000–1400 °C 在 Ar-20 vol% H2O-10 vol% 空气中大块 SiC 的氧化行为。钝化氧化层的厚度随时间呈抛物线状增加。在 1200 °C 以下形成致密且均匀的层,而在较高温度下观察到孔隙和裂纹。提出了一种分析模型来估计氧化层生长和 SiC 质量损失率。碳化硅层应能有效地保留被过量水和空气氧化后的裂变产物。这项工作是对 HTGR 冷却剂损失事故 (LOCA) 期间 SiC 层氧化的首次详细研究。
更新日期:2020-09-01
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