Gallium-doped zinc oxide (GZO) and tin-doped indium oxide (ITO) nanoparticles (NPs) were combined to create bi-component suspensions for the drop-casting and CO2-laser sintering of transparent conducting oxide (TCO) thin films with significantly reduced ITO content. An aqueous dispersion of ITO NPs enabled the suspension of GZO NPs without surfactants. Transmission electron microscopy indicated the formation of high aspect-ratio segments of ITO NPs from the suspension through oriented attachment, that persisted in the deposited and sintered thin films to establish an efficient electrical percolating network within the less conductive GZO NP matrix. Rapid CO2-laser sintering under argon gas of approximately 800 nm thick NP films yielded resistivities of 7.34 × 10−3 Ω·cm and 116 Ω·cm for pure ITO and pure GZO respectively. However, a bi-component film with only 19.6 at.% indium (relative to zinc) achieved a resistivity of 3.21 × 10−1 Ω·cm. By changing the ITO content, the near-infrared transmittance could be adjusted between 13% and 82% and the optical bandgap energy between 3.93 and 3.33 eV, enabling fine-tuning of the properties. Finally, a fast and material/energy efficient processing route was demonstrated for the fabrication of a GZO-ITO circuit pattern using CO2-laser patterning of a mask and CO2-laser sintering of the NP films.

中文翻译：

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具有可定制电学和光学特性的掺镓氧化锌/氧化铟锡纳米颗粒薄膜的激光烧结和图案化

掺镓氧化锌 (GZO) 和掺锡氧化铟 (ITO) 纳米粒子 (NPs) 相结合，形成双组分悬浮液，用于透明导电氧化物 (TCO) 薄膜的滴铸和 CO2 激光烧结减少 ITO 含量。ITO NPs 的水分散体使 GZO NPs 在没有表面活性剂的情况下悬浮。透射电子显微镜表明，通过定向附着从悬浮液中形成了高纵横比的 ITO NP 片段，这些片段持续存在于沉积和烧结的薄膜中，以在导电性较低的 GZO NP 基质内建立有效的电渗透网络。大约 800 nm 厚的 NP 膜在氩气下快速 CO2 激光烧结，纯 ITO 和纯 GZO 的电阻率分别为 7.34 × 10−3 Ω·cm 和 116 Ω·cm。然而，仅含 19.6 at.% 铟（相对于锌）的双组分薄膜实现了 3.21 × 10-1 Ω·cm 的电阻率。通过改变 ITO 含量，近红外透射率可以在 13% 到 82% 之间调整，光学带隙能量在 3.93 到 3.33 eV 之间，从而实现性能的微调。最后，展示了使用 CO2 激光掩模图案化和 NP 薄膜的 CO2 激光烧结来制造 GZO-ITO 电路图案的快速且材料/能源高效的工艺路线。