Abstract High-speed mid-wave infrared (MWIR) detectors are of significant interest for a wide range of applications in communication and spectroscopy. High-speed photodetection is conventionally achieved using reverse biased semiconductor p-i-n junction devices. However, implementing such structures in the mid-infrared (mid-IR) is challenging due to both the limited available material platforms and challenges associated with device design. Here we demonstrate a high-speed MWIR detector architecture that uses a microwave resonator circuit loaded with a photoconductive indium antimonide (InSb) pixel, originally grown highly lattice-mismatched on a GaAs substrate. Time domain measurements demonstrate sub-nanosecond detector response at temperatures from 77 K to room temperature. Frequency response measurements demonstrate that optical signals modulated at frequencies as high as 2 GHz can be well resolved up to room temperature. Time domain circuit simulations support the experimentally measured short minority carrier lifetimes in the InSb pixel, while also suggesting a circuit time constant of ~200 ps, which is ultimately the limiting factor for the bandwidth of the presented detector architecture. Our results provide an alternative approach for the development of contact-free, high-speed infrared detectors capable of directly interfacing with microwave components and structures for a range of RF/mid-IR applications.

中文翻译：

---

用于高速中波红外检测的 InSb 像素加载微波谐振器

摘要 高速中波红外 (MWIR) 探测器在通信和光谱学的广泛应用中具有重要意义。高速光电检测通常是使用反向偏置的半导体 pin 结器件来实现的。然而，由于有限的可用材料平台和与设备设计相关的挑战，在中红外 (mid-IR) 中实现此类结构具有挑战性。在这里，我们展示了一种高速 MWIR 检测器架构，该架构使用加载有光电导锑化铟 (InSb) 像素的微波谐振器电路，该像素最初是在 GaAs 衬底上高度晶格失配生长的。时域测量显示了在 77 K 至室温的温度下的亚纳秒检测器响应。频率响应测量表明，在高达 2 GHz 的频率下调制的光信号可以很好地解析到室温。时域电路仿真支持实验测量的 InSb 像素中的短少数载流子寿命，同时还建议 ~200 ps 的电路时间常数，这最终是所提出的探测器架构带宽的限制因素。我们的研究结果为开发非接触式高速红外探测器提供了一种替代方法，该探测器能够直接与微波组件和结构连接，用于一系列射频/中红外应用。同时还建议~200 ps 的电路时间常数，这最终是所提出的检测器架构带宽的限制因素。我们的研究结果为开发非接触式高速红外探测器提供了一种替代方法，该探测器能够直接与微波组件和结构连接，用于一系列射频/中红外应用。同时还建议~200 ps 的电路时间常数，这最终是所提出的检测器架构带宽的限制因素。我们的研究结果为开发非接触式高速红外探测器提供了一种替代方法，该探测器能够直接与微波组件和结构连接，用于一系列射频/中红外应用。