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Impact of Ta/Ti electrodes on linearities of TaO x -based resistive random-access memories for neuromorphic computing
Science China Physics, Mechanics & Astronomy ( IF 6.4 ) Pub Date : 2020-06-04 , DOI: 10.1007/s11433-020-1548-1
YiLin Fang , Tuo Shi , XuMeng Zhang , ZuHeng Wu , JunJie An , JinSong Wei , Jian Lu , Qi Liu

In this work, by incorporating different electrodes (Ta/Ti) onto TaOx dielectric layer, we studied both the conductance reading and conductance updating (long term potentiation and depression) linearities in the two RRAM devices. Owing to the composition modulation (CM) mechanism, the Ta-electrode device shows better conductance reading and updating linearities. The RRAM device linearities directly influence the performance of the neural network when the devices are used as synapses. System evaluation of a two-layer neural network considering the conductance reading and updating linearity factors further confirm that both the training and inference accuracies of Ta electrode device are better than those of the Ti electrode one. We believe that this work could serve as a powerful reference for engineering synaptic devices with good linearity for neuromorphic computing applications.

中文翻译:

Ta / Ti电极对基于TaO x的电阻性随机存取存储器用于神经形态计算的线性的影响

在这项工作中,通过将不同的电极(Ta / Ti)结合到TaO x上在电介质层中,我们研究了两个RRAM器件中的电导读数和电导更新(长期增强和抑制)线性。由于成分调制(CM)机制,Ta电极设备显示出更好的电导读取和更新线性。当将RRAM设备用作突触时,RRAM设备的线性会直接影响神经网络的性能。考虑电导读取和更新线性因素的两层神经网络的系统评估进一步证实,Ta电极装置的训练和推理精度均优于Ti电极装置。我们相信,这项工作可以为神经形态计算应用中具有良好线性度的工程突触设备提供强大的参考。
更新日期:2020-06-04
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