In this paper we report nanocrystalline ZnO thin films deposited by varying the Ga concentrations and atmosphere gas, onto the glass substrates using spray pyrolysis technique at 450 °C substrate temperature. After deposition Ga-doped ZnO thin films were annealed at temperature 420 °C in vacuum. The morphological, structural, optical and spectral properties of synthetized thin films have been characterized by scanning electron microscopy, X-ray diffraction, Raman analysis, UV–Vis spectrophotometry and spectrofluorimetry. The XRD result shows hexagonal structure with preferential orientation along the (0002) plane and the dependence of the values of the full-width at half-maximum of this peak on the nature of the gas used in the synthesis. Also, it is found that the optical bandgap can be increased by increasing the doping level. The fluorescence spectra of ZnO thin films with 1%, 2%, 3% and 5% concentrations of Ga demonstrate that these nanostructured thin films can produce reactive oxygen species (ROS) such as singlet oxygen under ultraviolet light. Nanocrystalline ZnO thin films in function of the Ga concentration provide the phosphorescence lifetime of the charge separated states up to 102 ms.

在本文中，我们报告了通过在450°C的基板温度下使用喷雾热解技术，通过改变Ga浓度和气氛气体将纳米晶ZnO薄膜沉积到玻璃基板上。沉积后，将掺Ga的ZnO薄膜在420°C的温度下真空退火。合成薄膜的形态，结构，光学和光谱特性已通过扫描电子显微镜，X射线衍射，拉曼分析，紫外可见分光光度法和荧光光谱法进行了表征。XRD结果显示出六边形结构，其具有沿（0002）面的优先取向，并且该峰的半峰全宽值与合成中所用气体的性质有关。另外，发现可以通过增加掺杂水平来增加光学带隙。Zn含量为1％，2％，3％和5％的ZnO薄膜的荧光光谱表明，这些纳米结构的薄膜可以在紫外线下产生活性氧（ROS），例如单线态氧。与Ga浓度有关的纳米ZnO薄膜提供电荷分离态的磷光寿命长达102 ms。