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Bendable Piezoelectric Micromachined Ultrasound Transducer (PMUT) Arrays Based on Silicon-On-Insulator (SOI) Technology
Journal of Microelectromechanical Systems ( IF 2.7 ) Pub Date : 2020-06-01 , DOI: 10.1109/jmems.2020.2972729 Sina Sadeghpour , Bram Lips , Michael Kraft , Robert Puers
Journal of Microelectromechanical Systems ( IF 2.7 ) Pub Date : 2020-06-01 , DOI: 10.1109/jmems.2020.2972729 Sina Sadeghpour , Bram Lips , Michael Kraft , Robert Puers
This paper presents the design and fabrication method to render a silicon-on-insulator (SOI)-based pMUT array bendable. The proposed method can be applied to silicon-based pMUT arrays with different acoustical specifications. A bendable array based on the proposed method is highly conformal to the target structure. The bendable structure is made out of several silicon islands containing a pMUT array and are connected to each other by silicon springs. The silicon springs are realized by deep reactive ion etching (DRIE) that was also used to create the pMUT membranes. The fabrication process requires one additional photomask step compared to a process that realizes only pMUTs. Since the pMUT arrays are fabricated on silicon islands with the thickness of the entire SOI wafer, therefore their performance is not compromised. As a case study, a bendable array was designed and fabricated to be wrapped around a $5\times 5\times 5$ mm3 3D printed cube. Therefore, each bendable array has 6 islands with a dimension of $3\times 3$ mm2 including $3\times 3$ pMUT array, of which each pMUT has a diameter of 410 $\mu \text{m}$ and a thickness of 6 $\mu \text{m}$ with a 1 $\mu \text{m}$ Lead Zirconate Titanate (PZT) layer as the piezoelectric material. The silicon springs in between each island have a spring constant of 2.3 (N/m) in their folding direction. This compliant structure enables a 90° bending with a bending radius of 1 mm. The pMUT elements in the array resulted in a displacement response of 2.1 $\mu \text{m}$ /V and a Q-factor of 104 at 426 kHz, when all arrays were excited all together. [2019-0224]
中文翻译:
基于绝缘体上硅 (SOI) 技术的可弯曲压电微机械超声换能器 (PMUT) 阵列
本文介绍了使基于绝缘体上硅 (SOI) 的 pMUT 阵列可弯曲的设计和制造方法。所提出的方法可以应用于具有不同声学规格的硅基 pMUT 阵列。基于所提出方法的可弯曲阵列与目标结构高度共形。可弯曲结构由包含 pMUT 阵列的几个硅岛制成,并通过硅弹簧相互连接。硅弹簧是通过深度反应离子蚀刻 (DRIE) 实现的,也用于创建 pMUT 膜。与仅实现 pMUT 的工艺相比,制造工艺需要一个额外的光掩模步骤。由于 pMUT 阵列是在具有整个 SOI 晶片厚度的硅岛上制造的,因此它们的性能不会受到影响。作为案例研究, $5\times 5\times 5$ mm 3 3D 打印立方体。因此,每个可弯曲阵列有 6 个岛,尺寸为 $3\times 3$ 毫米2包括 $3\times 3$ pMUT 阵列,其中每个 pMUT 的直径为 410 $\mu \text{m}$ 和 6 的厚度 $\mu \text{m}$ 与 1 $\mu \text{m}$ 锆钛酸铅 (PZT) 层作为压电材料。每个岛之间的硅弹簧在其折叠方向上的弹簧常数为 2.3 (N/m)。这种柔顺结构能够以 1 毫米的弯曲半径进行 90° 弯曲。阵列中的 pMUT 元件导致位移响应为 2.1 $\mu \text{m}$ /V 和 426 kHz 时的 Q 因子为 104,此时所有阵列都被一起激励。[2019-0224]
更新日期:2020-06-01
中文翻译:
基于绝缘体上硅 (SOI) 技术的可弯曲压电微机械超声换能器 (PMUT) 阵列
本文介绍了使基于绝缘体上硅 (SOI) 的 pMUT 阵列可弯曲的设计和制造方法。所提出的方法可以应用于具有不同声学规格的硅基 pMUT 阵列。基于所提出方法的可弯曲阵列与目标结构高度共形。可弯曲结构由包含 pMUT 阵列的几个硅岛制成,并通过硅弹簧相互连接。硅弹簧是通过深度反应离子蚀刻 (DRIE) 实现的,也用于创建 pMUT 膜。与仅实现 pMUT 的工艺相比,制造工艺需要一个额外的光掩模步骤。由于 pMUT 阵列是在具有整个 SOI 晶片厚度的硅岛上制造的,因此它们的性能不会受到影响。作为案例研究,