This article investigates the stochastic Schottky barrier variations of printed distributed Schottky diodes consisting of a self-assembled arrangement of crystalline silicon microcones onto a metal layer. The microcone formation emerges from an inkjet printed Si nanoparticle film after laser sintering, yielding a Schottky diode when a corresponding top metallization is applied. The $I - V$ characteristic and the voltage-dependent impedance of such diode is measured. By using the simulation software Advanced Design System (ADS), we develop a new scalable circuit model consisting of many different elementary diodes, which can explain the measured behavior. The elementary microcone diodes differ electrically in their barrier height, which is modeled as a stochastic process with a Gaussian distribution. A comparison between this model and a single diode model based on the thermionic field emission theory is conducted. We show that the distributed model outperforms the single-diode model in every regard and allows a prediction of the power levels of the harmonic frequency generation. Through more in-depth research, we find that a distributed barrier height leads to a smoother $I - V$ curve, which in turn can lead to higher second and third harmonic power levels. By adjusting the barrier height distribution, the desired harmonics can be increased.

中文翻译：

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用于高效产生高次谐波的印刷高频整流器的随机大信号模型

本文研究了印刷分布式肖特基二极管的随机肖特基势垒变化，该二极管由晶体硅微锥在金属层上的自组装排列组成。激光烧结后，喷墨印刷的硅纳米粒子薄膜形成微锥，当应用相应的顶部金属化时，产生肖特基二极管。测量了这种二极管的 $I - V$ 特性和电压相关阻抗。通过使用仿真软件高级设计系统 (ADS)，我们开发了一种新的可扩展电路模型，该模型由许多不同的基本二极管组成，可以解释测量的行为。基本微锥二极管的势垒高度在电气上不同，这被建模为具有高斯分布的随机过程。对该模型与基于热电子场发射理论的单二极管模型进行了比较。我们表明分布式模型在各个方面都优于单二极管模型，并且可以预测谐波频率生成的功率水平。通过更深入的研究，我们发现分布的势垒高度会导致更平滑的 $I - V$ 曲线，进而导致更高的二次和三次谐波功率水平。通过调整势垒高度分布，可以增加所需的谐波。我们发现分布的势垒高度会导致更平滑的 $I - V$ 曲线，这反过来又会导致更高的二次和三次谐波功率水平。通过调整势垒高度分布，可以增加所需的谐波。我们发现分布的势垒高度会导致更平滑的 $I - V$ 曲线，这反过来又会导致更高的二次和三次谐波功率水平。通过调整势垒高度分布，可以增加所需的谐波。