The effects of irradiation on CaWO₄, SrWO₄, BaWO₄, YVO₄, LaVO₄, YNbO₄, and LaNbO₄ were investigated on thin crystals using 1.0 MeV Kr ions at 50‐1000 K. All of the ABO₄ compounds can be amorphized with calculated damage cross sections (σ_a  = 1/F _c0) in the range of ~0.30‐1.09 × 10^‐14 cm² ion⁻¹ at zero Kelvin. The analysis of fluence‐temperature data returned critical temperatures for amorphization (T _c) of 311 ± 1, 358 ± 90, 325 ± 19, 415 ± 17, 541 ± 6, 636 ± 26, and 1012 ± 1 K, respectively, for the compounds listed above. Compared with previous in situ irradiation of ABO₄ orthophosphate samples using 0.8 MeV Kr ions, the T _c values of LaVO₄ and YVO₄ are higher than those of LaPO₄ and YPO₄ by 82 K and 124 K, respectively. The T _c values of the three scheelite structures, CaWO₄, SrWO₄, and BaWO₄, indicate that they are the most radiation tolerant compounds under these conditions. The A‐B cation anti‐site energies, E_{f AB}, determined by DFT range from 2.48 to 10.58 eV and are highly correlated with the A‐B cation ionic radius ratio, r _A/r _B, but are not correlated with T _c across the different structure types, suggesting that the formation and migration energies of Frenkel defects play a more important role in damage recovery in these compounds. We also discuss the role of cation and anion charge/iconicity as determined by DFT. ABO₄ compounds with the zircon structure and B = P or V have a distinct advantage over those with B = Si as the damaged regions do not appear to be significantly affected by polymerization of (PO₄)³⁻ or (VO₄)³⁻ groups which might stabilize the amorphous fraction and ultimately lead to phase separation as observed in zircon (ZrSiO₄).

中文翻译：

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铁氧体，独居石，白钨矿和锆石结构对ABO4化合物的离子束辐照

照射对CaWO的影响₄，SrWO ₄，钨酸钡₄，YVO ₄，LAVO ₄，YNbO ₄，和蓝博₄分别在50-1000 K.所有ABO的使用1.0兆电子伏的离子氪薄晶体研究_4个化合物可以是与计算出的损伤截面非晶化（σ_一个  = 1 / ˚F _C0在〜0.30-1.09×10的范围内）^-14厘米²离子^-1在零开尔文。通量温度数据的分析返回了非晶化的临界温度（T _c）对于上述所列化合物，分别为311±1、358±90、325±19、415±17、541±6、636±26和1012±1 K）。与以前使用0.8 MeV Kr离子原位照射ABO ₄正磷酸盐样品相比，LaVO ₄和YVO ₄的T _c值分别比LaPO ₄和YPO _4高82 K和124K 。该Ť _Ç三个白钨矿结构，CaWO的值₄，SrWO ₄，和钨酸钡₄，表明它们是在这些条件下的最耐辐射的化合物。A-B阳离子反位能E _f 由DFT测得的_AB范围为2.48至10.58 eV，并且与A‐B阳离子离子半径比r _A / r _B高度相关，但在不同结构类型下与T _c不相关，表明形成和迁移Frenkel缺陷的能量在这些化合物的损伤恢复中起着更重要的作用。我们还讨论了由DFT确定的阳离子和阴离子电荷/离子性的作用。具有锆石结构且B = P或V的ABO ₄化合物相对于具有B = Si的化合物具有明显的优势，因为受损区域似乎不受（PO ₄）^3-或（VO ₄）聚合的显着影响。）^3-基团可能稳定无定形部分并最终导致相分离，如在锆石（ZrSiO ₄）中观察到的。