Abstract We investigated the growth process of vertically-oriented graphene nanosheets (VGs) on a Si substrate by helicon wave plasma chemical vapor deposition (HWP-CVD). The results show that VGs has good vertical orientation on Si and the growth process does not require the catalyst. Modulation of height, thickness and mesh size of vertical graphene nanosheets can be achieved by changing the growth time. It is found that the height of VGs is linear with time. Extremely high growth rate, approximately 0.26 μm/min, is achieved, in contrast to previous studies. The results of Cyclic voltammetry (CV) measurement indicating that VGs have a very rapid current–voltage response, an excellent electrochemical reversibility and excellent capacitive behavior. The VGs was able to deliver an outstanding specific capacitance value of 345 μF/cm2, and demonstrated an excellent rate capability, which retained 94.41%.

中文翻译：

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螺旋波等离子体化学气相沉积快速制备垂直石墨烯纳米片及其电化学性能

摘要 我们通过螺旋波等离子体化学气相沉积 (HWP-CVD) 在 Si 衬底上研究了垂直取向的石墨烯纳米片 (VG) 的生长过程。结果表明，VGs 在 Si 上具有良好的垂直取向，生长过程不需要催化剂。垂直石墨烯纳米片的高度、厚度和网格尺寸的调制可以通过改变生长时间来实现。发现 VG 的高度与时间呈线性关系。与之前的研究相比，实现了极高的生长速率，大约为 0.26 μm/min。循环伏安法 (CV) 测量结果表明 VG 具有非常快速的电流-电压响应、优异的电化学可逆性和优异的电容行为。VG 能够提供 345 μF/cm2 的出色比电容值，