GaN-based microdisk lasers grown on Si have a wide application prospect in communication and Si photonics. However, the relatively large threshold current and thermal resistance often cause a very high junction temperature, which severely affects the device performance. Here we analyzed the thermal characteristics of GaN-based microdisk lasers grown on Si substrates. According to the simulation results, we have significantly reduced the threshold current and junction temperature by reducing the current injection area and device size, respectively. As a result, continuous-wave electrically injected lasing has been achieved at room temperature for both micro-ring and microdisk lasers grown on Si.

中文翻译：

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Si上电注入GaN基微盘激光器的热特性

在Si上生长的GaN基微盘激光器在通信和Si光子学方面具有广泛的应用前景。然而，相对较大的阈值电流和热阻往往会导致非常高的结温，严重影响器件性能。在这里，我们分析了在 Si 衬底上生长的基于 GaN 的微盘激光器的热特性。根据仿真结果，我们分别通过减小电流注入面积和器件尺寸，显着降低了阈值电流和结温。因此，对于在硅上生长的微环和微盘激光器，在室温下已经实现了连续波电注入激光。