The fundamental reason for the decrease in solar cells (SC) voltage when introducing nanostructures has been found. It consists in the fact that recombination redistributes between nanostructures and bulk GaAs. It has been shown that, by changing the position of nanostructures medium in the p-i-n GaAs SCs, it is possible to partially suppress the recombination and improve the voltage maintaining an increase in the short-circuit current. The decrease of the recombination via nanostructures has provided an increase in SC efficiency from 19.87% to 21.94%.

中文翻译：

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用 In _0.4 Ga _0.6 As 纳米结构提高 GaAs 太阳能电池的电压

已经找到了引入纳米结构时太阳能电池 (SC) 电压降低的根本原因。它在于复合重新分布在纳米结构和块状 GaAs 之间。已经表明，通过改变pin GaAs SCs中纳米结构介质的位置，可以部分抑制复合并提高电压，保持短路电流的增加。通过纳米结构减少复合使 SC 效率从 19.87% 增加到 21.94%。