Silicon ( IF 3.4 ) Pub Date : 2020-06-04 , DOI: 10.1007/s12633-020-00526-x Jaydeep Singh Parmar , Nawaz Shafi , Chitrakant Sahu
In this paper, a triple gate (TG) cavity based, polysilicon junctionless (JL) ion-sensitive field-effect transistor (ISFET) architecture has been proposed for the first time. The performance of the proposed device has been compared with conventionally doped ISFET. The effect of pH is investigated for different adhesion layers, device layer thickness (tsi), electrolyte thickness (te) and, channel lengths (L). Threshold voltage(\(\frac {\triangle {V_{th}}}{\triangle {pH}}\)) has been used as sensing metric for analysis and comparison. Besides, ION/IOFF ratio has also been measured for different pH. The average maximum threshold voltage sensitivity of the proposed device has been measured and found to be 72.5%, 49.5%, and 53.7% better than TG-conventional ISFET for different adhesion layers, device layer thickness, and channel lengths respectively. Furthermore, the effect of channel lenghth on threshold voltage sensitivity has also been studied. It is observed that the sensitivity increases with increase in channel length. The implementation and all the simulations have been performed by using the ATLAS device simulator.
中文翻译:
基于腔的三门无结生物传感器的氢离子传感特性,可增强灵敏度
在本文中,首次提出了基于三栅极(TG)腔的多晶硅无结(JL)离子敏感场效应晶体管(ISFET)架构。所提出的器件的性能已与常规掺杂的ISFET进行了比较。研究了pH对不同粘附层,器件层厚度(t s i),电解质厚度(t e)和通道长度(L)的影响。阈值电压(\(\ frac {\ triangle {V_ {th}}} {\ triangle {pH}} \))已用作分析和比较的检测指标。此外,I O N / I O F F还针对不同的pH测量了比率。测量了所提出器件的平均最大阈值电压灵敏度,发现对于不同的粘附层,器件层厚度和沟道长度,它们分别比TG常规ISFET改善了72.5%,49.5%和53.7%。此外,还研究了沟道长度对阈值电压灵敏度的影响。可以看出,灵敏度随着通道长度的增加而增加。通过使用ATLAS设备仿真器可以执行该实现和所有仿真。