In the present study, an all-solid-state half-cell Li/ amorphous Si (a-Si) was fabricated using the guest Li⁺ ion conductor (15NaI∙LiBH₄) as a solid electrolyte. Continuous lithiation/delithiation of the a-Si film was confirmed. At room temperature, the charge-discharge cycles were stable over 80 cycles with the high Coulombic efficiency of 99%. On the other hand, the poor rate performances are the problem; the capacities remained at approximately 1300 mAh/g at 12.7 μA/cm². Heating the cell at 60 °C resulted in the improvement of the rate performance, which can be due to the improvement of the Li⁺ conductivity of 15NaI∙LiBH₄. In order to understand the correlation between the microstructure and Li⁺ conductivity of 15NaI∙LiBH₄, the as-milled sample was post-annealed and the variation in the microstructure was observed by transmission electron microscopy (TEM). It was indicated that the lattice defects, such as dislocation and lattice distortion, have a significant contribution for the Li⁺ ion conductivity of the 15NaI∙LiBH₄.

在本研究中，使用客体Li ⁺离子导体（15NaI∙LiBH ₄）作为固体电解质制备了全固态半电池Li /非晶硅（a- Si）。确认了-Si膜的连续锂化/脱锂。在室温下，充放电循环在80个循环中保持稳定，库仑效率高达99％。另一方面，差rate的表现是问题所在；在12.7μA/ cm ^2下，容量保持在约1300mAh / g 。将电池加热到60°C可以提高倍率性能，这可能是由于15NaI∙LiBH ₄的Li ⁺电导率提高了。为了了解15NaI∙LiBH ₄的微观结构与Li ⁺电导率之间的相关性，对退火后的样品进行了退火处理，并通过透射电子显微镜（TEM）观察了微观结构的变化。研究表明，位错和晶格畸变等晶格缺陷对15NaI∙LiBH ₄的Li ⁺离子电导率具有重要影响。