A novel, large‐signal behavioral modeling methodology for radio frequency power transistors, based on the modified canonical sectionwise piecewise‐linear (CSWPL) functions, is presented in this article. The basic theory of the proposed model is provided. Compared with the existing standard CSWPL model, the proposed model provides superior prediction capabilities for a reasonable increase in model complexity. Model verification is performed through comparisons with simulated and experimental data of a 10 W GaN HEMT device at mild and severe mismatch conditions, across a wide range of input power levels. The models can predict, more accurately, both the fundamental and the second harmonic scattered waves compared with the standard CSWPL model.

中文翻译：

---

基于修正正则分段分段线性函数的射频功率晶体管大信号行为模型

本文提出了一种基于改进的规范分段分段线性（CSWPL）函数的，用于射频功率晶体管的新颖的大信号行为建模方法。提供了所提出模型的基本理论。与现有的标准CSWPL模型相比，该模型为模型复杂性的合理增加提供了出色的预测能力。通过与10 W GaN HEMT器件的模拟和实验数据进行比较，在轻度和严重失配条件下，在各种输入功率范围内进行模型验证。与标准CSWPL模型相比，该模型可以更准确地预测基波和二次谐波散射波。