Abstract Two dimensional transition metal dichalcogenides (TMDC) have gained potential attention of the researchers, owing to their fascinating electronic and optoelectronic properties. Among the TMDC, the widely studied molybdenum disulphide (MoS2) stands out as a prototypical material. In this work, rapid thermal process (RTP) is adopted for the deposition of MoS2 thin film, using sputtered molybdenum (Mo) thin film and thermally evaporated sulphur (S) film. The microstructural and electrical characteristics of the MoS2 thin films were studied by varying the H2 flow rate in the rapid thermal processing furnace. Field Emission Scanning Electron Microscope images showed the improvement in the uniformity of the MoS2 thin films with the increase in the flow rate of H2 gas. The X-ray diffraction peak has been observed at 14.1°, corresponding to the (002) plane of the hexagonal MoS2 (2H). Raman spectra depict two peaks around 400 cm−1 for A1g and E2g1active modes, which a fingerprint of 2H MoS2. The FTIR studies also depicted the enhancement of MoS2 characteristics peaks with the increase in H2 flow rate. In order to study the effect of substrate, MoS2 films were grown on both Si and SiO2/Si substrates. Among the various H2 flow rates used during the RTP, MoS2 thin films grown with 20 sccm H2 gas at 800 °C has shown better microstructural properties. In order to study the semiconductor properties of MoS2 thin films, the carrier concentration has been calculated from the heterojunction capacitance and is found to be ~1016 cm−3. The comprehensive study on the effect of H2 flow rate on the properties of MoS2 thin films imparts the underlying role of hydrogen atoms in the deposition process, which paves a way for the controlled synthesis of low dimensional materials.

中文翻译：

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通过 H2 气流调节快速热合成 MoS2 薄膜的微观结构和电学性能

摘要 二维过渡金属二硫属化物（TMDC）由于其迷人的电子和光电特性而引起了研究人员的潜在关注。在 TMDC 中，广泛研究的二硫化钼 (MoS2) 作为原型材料脱颖而出。在这项工作中，采用快速热处理 (RTP) 来沉积 MoS2 薄膜，使用溅射钼 (Mo) 薄膜和热蒸发硫 (S) 薄膜。通过改变快速热处理炉中的 H2 流速来研究 MoS2 薄膜的微观结构和电学特性。场发射扫描电子显微镜图像显示，随着 H2 气体流量的增加，MoS2 薄膜的均匀性得到改善。在 14.1°处观察到 X 射线衍射峰，对应于六方 MoS2 (2H) 的 (002) 平面。拉曼光谱描绘了 A1g 和 E2g1 活性模式在 400 cm-1 附近的两个峰，这是 2H MoS2 的指纹。FTIR 研究还描述了 MoS2 特征峰随着 H2 流速的增加而增强。为了研究衬底的影响，在 Si 和 SiO2/Si 衬底上都生长了 MoS2 薄膜。在 RTP 期间使用的各种 H2 流速中，在 800 °C 下用 20 sccm H2 气体生长的 MoS2 薄膜显示出更好的微观结构特性。为了研究 MoS2 薄膜的半导体特性，从异质结电容计算出载流子浓度，发现其为~1016 cm-3。