Abstract

Resistive-type structures based on gallium-oxide films are studied. The Ga₂O₃ films are produced by radio-frequency magnetron-assisted sputtering of a β-Ga₂O₃ (99.9999%) target onto unheated sapphire substrates with preliminarily deposited platinum electrodes. The data on the structure and phase composition of the films are obtained immediately after sputtering and after annealing in argon at 900°C for 30 min. The current–voltage characteristics are recorded in the dark and upon exposure to radiation at the wavelength λ = 254 nm. It is shown that, after annealing, the photocurrent increases by an order of magnitude. The lack of sensitivity of the structures to radiation in the visible wavelength region (λ = 400 nm) is verified experimentally.

中文翻译：

---

基于β-Ga2 O 3膜的日盲紫外检测器

摘要

研究了基于氧化镓膜的电阻型结构。中的Ga ₂ ö ₃薄膜通过射频磁控管辅助一个溅射的β-Ga产生₂ ö ₃（99.9999％）会通过预先沉积的铂电极对准未加热的蓝宝石衬底。在溅射之后以及在氩气中在900°C下退火30分钟之后，立即获得有关膜的结构和相组成的数据。在黑暗中以及暴露于波长λ= 254 nm的辐射下记录的电流-电压特性。结果表明，退火后，光电流增加了一个数量级。实验证明了该结构对可见波长区域（λ= 400 nm）中辐射的敏感性不足。